VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 1 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 igbt econo3 module, 150 a features ? gen 5 non punch through (npt) technology ? 10 s short circuit capability ? square rbsoa ? hexfred low q rr , low switching energy ? positive temperature coefficient ? copper baseplate ? operating frequencies 8 khz to 60 khz ? low stray inductance design ? ul approved file e78996 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 benefits ? benchmark efficiency for smps appreciation in particular hf welding ? rugged transient performance ? low emi, requir es less snubbing ? direct mounting to heatsink space saving ? pcb solderable terminals ? low junction to case thermal resistance product summary v ces 1200 v i c(dc) at t c = 57 c 150 a v ce(on) typ. at 150 a 3.45 v package econo3 4 pack circuit 4 pack with thermistor econo 3 4 pack absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 182 a t c = 80 c 124 pulsed collector current i cm 370 clamped inductive load current i lm 370 diode continuous forward current i f t c = 25 c 113 t c = 80 c 78 diode maximum forward current i fsm 730 gate to emi tter voltage v ge 20 v maximum power dissipation igbt p d t c = 25 c 892 w t c = 80 c 500 module operating junction temperature range t j -55 to +150 c storage temperature range t stg -40 to +125 rms isolation voltage v isol any terminal to case, t = 1 s 3500 v
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 2 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 500 a 1200 - - v collector to em itter voltage v ce(on) v ge = 15 v, i c = 150 a - 3.45 4.0 v ge = 15 v, i c = 200 a - 3.9 - v ge = 15 v, i c = 150 a, t j = 125 c - 3.87 - v ge = 15 v, i c = 200 a, t j = 125 c - 4.42 - gate threshold voltage v ge(th) v ce = v ge , i c = 1.5 ma 4.1 4.9 6.5 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma, (25 c to 125 c) - -12.3 - mv/c collector to emitte r leaking current i ces v ge = 0 v, v ce = 1200 v - 21 120 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 1.57 - ma diode forward voltage drop v fm i f = 100 a - 2.73 3.5 v i f = 150 a - 3.18 - i f = 100 a, t j = 125 c - 2.8 - i f = 150 a, t j = 125 c - 3.4 - gate to emitter leakage current i ges v ge = 20 v - - 440 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units total gate charge (turn-on) q g i c = 150 a v cc = 600 v ? v ge = 15 v - 1260 - nc gate to emitter charge (turn-on) q ge - 130 - gate to collector charge (turn-on) q gc - 500 - turn-on switching loss e on i c = 150 a, v cc = 600 v, v ge = 15 v, ? r g = 4.7 ? , l = 500 h, t j = 25 c -5.86- mj turn-off switching loss e off -4.7- total switching loss e tot - 10.56 - turn-on switching loss e on v cc = 600 v, i c = 150 a, v ge = 15 v, ? r g = 4.7 ? , l = 500 h, t j = 125 c -7.74- turn-off switching loss e off -7.2- total switching loss e tot - 14.94 - turn-on delay time t d(on) i c = 150 a, v cc = 600 v, v ge = 15 v, ? r g = 4.7 ? , l = 500 h, t j = 125 c - 474 - ns rise time t r -89- turn-off delay time t d(off) - 520 - fall time t f - 101 - reverse bias safe operating area rbsoa t j = 150 c, i c = 370 a, r g = 4.7 ? , ? v ge = 15 v to 0, v cc = 600 v, v p = 1200 v short circuit safe operating area scsoa t j = 150 c, v cc = 900 v, v p = 1200 v, r g = 10 ? , v ge = 15 v to 0 10 - - s diode reverse recovery time t j = 25 c t rr v r = 400 v, i f = 50 a ? di/dt = 200 a/s - 210 - ns t j = 125 c - 345 - diode peak reverse current t j = 25 c i rr -13.8- a t j = 125 c - 23.2 - diode recovery charge t j = 25 c q rr - 1448 - nc t j = 125 c - 3990 -
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 3 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical igbt output characteristics, v ge = 15 v fig. 2 - typical igbt output characteristics, t j = 125 c fig. 3 - maximum igbt cont inuous collector current vs. case temperature fig. 4 - collector to emitter vo ltage vs. junction temperature internal ntc - thermistor specifications parameter symbol test conditions value units resistance r 25 t c = 25 c 5000 ? r 100 t c = 100 c 493 5 % b-value b 25/50 r 2 = r 25 exp. [b 25/50 (1/t 2 - 1/(298.15 k))] 3375 5 % k maximum operating temperature 220 c dissipation constant 2mw/c thermal time constant 8s thermal and mechanical specifications parameter symbol min. typ. max. units igbt - junction to case (per switch) r thjc - - 0.14 c/w diode - junction to case (per diode) r thjc --0.3 case to sink, flat, greased surface (per module) r thjs - 0.015 - mounting torque (m5) 3.0 - 6.0 nm weight - 290 - g 0 30 60 90 120 150 180 210 240 270 300 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i c (a) v ce (v) t j = 125 c t j = 25 c 0 30 60 90 120 150 180 210 240 270 300 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 i c (a) v ce (v) v g e = 12 v v g e = 15 v v g e = 18 v v g e = 9 v 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200 allowable case temperature ( c) i c - continuous collector current (a) dc 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 0 20406080100120140160 v ce (v) t j ( c) 150 a 200 a 100 a
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 4 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical igbt transfer characteristics fig. 6 - typical igbt gate threshold voltage fig. 7 - igbt reverse bias soa t j = 150 c, v ge = 15 v fig. 8 - typical igbt zero gate voltage collector current fig. 9 - typical diode forward characteristics fig. 10 - maximum diode cont inuous forward current vs. case temperature 0 30 60 90 120 150 180 210 240 270 300 34567891011 i c (a) v g e (v) t j = 25 c t j = 125 c v ce = 20 v 2.5 2.8 3.1 3.4 3.7 4.0 4.3 4.6 4.9 5.2 5.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g e(th) (v) i c (ma) t j = 25 c t j = 125 c i c (a) v ce (v) 10 100 1000 10 000 1 1000 10 100 chip level module level 0.0001 0.001 0.01 0.1 1 10 0 200 400 600 800 1000 1200 i ce s (ma) v ce s (v) t j = 25 c t j = 125 c t j = 150 c 0 30 60 90 120 150 180 210 240 270 300 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 i f (a) v fm (v) t j = 25 c t j = 125 c 0 20 40 60 80 100 120 140 160 0 20406080100120 allowable case temperature ( c) i f - continuous forwar d current (a) dc
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 5 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - typical igbt energy loss vs. i c t j = 125 c, v cc = 600 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 12 - typical igbt switching time vs. i c t j = 125 c, v cc = 600 v, r g = 4.7 ? , v ge = 15 v, l = 500 h fig. 13 - typical igbt energy loss vs. r g t j = 125 c, v cc = 600 v, i c = 150 a, v ge = 15 v, l = 500 h fig. 14 - typical igbt switching time vs. r g t j = 125 c, v cc = 600 v, i c = 150 a, v ge = 15 v, l = 500 h fig. 15 - typical diode reverse recovery time vs. di f /dt v rr = 400 v, i f = 50 a fig. 16 - typical diode reverse recovery current vs. di f /dt v rr = 400 v, i f = 50 a 0 1 2 3 4 5 6 7 8 9 10 11 40 60 80 100 120 140 160 180 200 220 energy (mj) i c (a) e off e on 10 100 1000 40 60 80 100 120 140 160 180 200 220 s witching time (ns) i c (a) t r t d(off) t d(on) t f 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 50 energy (mj) r g ( e off e on 10 100 1000 10 000 0 5 10 15 20 25 30 35 40 45 50 s witching time (ns) r g () t d(off) t f t d(on) t r 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 420 440 460 100 200 300 400 500 t rr (ns) d i f / d t (a/s) t j = 25 c t j = 125 c 4 7 10 13 16 19 22 25 28 31 34 37 40 100 200 300 400 500 i rr (a) d i f / d t (a/s) t j = 25 c t j = 125 c
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 6 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 17 - typical diode reverse recovery charge vs. di f /dt, v rr = 400 v, i f = 50 a fig. 18 - maximum thermal impedance z thjc characteristics (igbt) fig. 19 - maximum thermal impedance z thjc characteristics (diode) 200 500 800 1100 1400 1700 2000 2300 2600 2900 3200 3500 3800 4100 4400 4700 100 200 300 400 500 q rr (nc) d i f / d t (a/s) t j = 25 c t j = 125 c 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectangular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc 0.01 0.1 1 0.001 0.01 0.1 1 10 z thjc - thermal impe d ance junction to case ( c/w) t 1 - rectangular pulse duration (s) 0.50 0.20 0.10 0.05 0.02 0.01 dc
VS-GB150YG120NT www.vishay.com vishay semiconductors revision: 22-apr-16 7 document number: 93631 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 1 - insulated gate bipolar transistor (igbt) - vishay semiconductors product 2 - b = igbt generation 5 npt 3 - current rating (150 = 150 a) 4 - circuit configuration (y = 4 pack) 5 - package indicator (g = econo3) 6 - voltage rating (120 = 1200 v) 7 8 - ntc thermistor 9 device code 5 1 3 2 4 6 7 8 9 g vs- b 150 y g 120 n t - speed / type (n = ultrafast with reduced diode, speed 8 khz to 60 khz) circuit configuration circuit circuit configuration code circuit drawing 4 pack with thermistor y links to related documents dimensions www.vishay.com/doc?95686 1 2 qb2 3 4 qb1 25 26 23 24 22 20 21 19 7 8 qb4 9 10 qb3 11 12 13 14 18 16 17 15 ntc 6 5
outline dimensions www.vishay.com vishay semiconductors revision: 21-apr-16 1 document number: 95686 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 econo3 4 pack dimensions in millimeters and inches 12 34 78 910 15 16 17 18 19 20 21 22 23 24 25 26 6 5 11 12 13 14
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